Semiconductor bandgap and carriers
semiconductor_carriersCalculate Varshni bandgap, intrinsic and doped equilibrium carriers, Fermi level above the valence edge and conductivity for Si, Ge or GaAs. Assumes fully ionized dopants and non-degenerate statistics; conductivity uses fixed 300 K low-field mobilities and the result flags degeneracy.
Tool call template
Replace each placeholder with a value matching the input schema. Only required parameters are included; add optional parameters as needed.
{
"id": 1,
"jsonrpc": "2.0",
"method": "tools/call",
"params": {
"arguments": {
"material": "<material>",
"temperature_k": "<temperature_k>",
"net_doping_cm3": "<net_doping_cm3>"
},
"name": "semiconductor_carriers"
}
}Input Schema
| Name | Required | Description | Default |
|---|---|---|---|
| material | Yes | si, ge or gaas. | |
| temperature_k | Yes | Temperature, 100 to 600 K. | |
| net_doping_cm3 | Yes | Signed ND minus NA in cm-3, between -1e20 and 1e20. |